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P20NM5 20001 051B01LF CKDIAAAA IRU3027 2SK1739 10700470 N52050M
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  Datasheet File OCR Text:
 Semiconductor
PN2222A
NPN Silicon Transistor
Descriptions
* General purpose application * Switching application
Features
* Low Leakage current * Low collector saturation voltage enabling low voltage operation * Complementary pair with PN2907A
Ordering Information
Type NO. PN2222A Marking PN2222A Package Code TO-92
Outline Dimensions
3.450.1 4.50.1 2.250.1
unit : mm
4.50.1
0.40.02
2.060.1
14.00.40
14.00.40
1.27 Typ. 2.54 Typ.
123
PIN Connections 1. Emitter 2. Base 3. Collector
1.200.1
0.38
KST-9008-000
1
PN2222A
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
Ta=25C
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
75 40 5 600 625 150 -55~150
Unit
V V V mA mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time
Ta=25C
Symbol
BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob td tr ts tf
Test Condition
IC=10A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=75V, IE=0 VCE=10V, IC=10mA IC=150mA, IB=15mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc, VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc
Min. Typ. Max.
75 40 5 100 250 20 0.4 8 10 25 225 60
Unit
V V V nA V MHz pF ns ns ns ns
KST-9008-000
2
PN2222A
Electrical Characteristic Curves
Fig. 1 PC-Ta Fig. 2 hFE-IC
Fig. 3 VCE(sat)-IC
Fig. 4 Cob-VCB
KST-9008-000
3


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